发明名称 |
Bonding method of semiconductor device |
摘要 |
A bonding method of semiconductor device by using a film carrier; A heat-resistive insulating layer is deposited all over the surface of a dummy wafer on which a photo-resist film having a predetermined pattern is previously formed; The photo-resist film is removed together with the heat-resistive insulating layer for forming openings; Bumps are formed on the openings by plating using the heat-resistive insulating layer as a mask; After transferring the bumps to inner leads, the bumps of the inner leads are bonded to bonding pads of the semiconductor element.
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申请公布号 |
US4676864(A) |
申请公布日期 |
1987.06.30 |
申请号 |
US19860863152 |
申请日期 |
1986.05.14 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MAEDA, YUKIO;KITAYAMA, YOSHIFUMI;MURAKAMI, SHUICHI |
分类号 |
H01L21/60;H01L21/603;H01L23/485;(IPC1-7):B29C37/00;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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