发明名称 Bonding method of semiconductor device
摘要 A bonding method of semiconductor device by using a film carrier; A heat-resistive insulating layer is deposited all over the surface of a dummy wafer on which a photo-resist film having a predetermined pattern is previously formed; The photo-resist film is removed together with the heat-resistive insulating layer for forming openings; Bumps are formed on the openings by plating using the heat-resistive insulating layer as a mask; After transferring the bumps to inner leads, the bumps of the inner leads are bonded to bonding pads of the semiconductor element.
申请公布号 US4676864(A) 申请公布日期 1987.06.30
申请号 US19860863152 申请日期 1986.05.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MAEDA, YUKIO;KITAYAMA, YOSHIFUMI;MURAKAMI, SHUICHI
分类号 H01L21/60;H01L21/603;H01L23/485;(IPC1-7):B29C37/00;B44C1/22;C03C15/00;C03C25/06 主分类号 H01L21/60
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