| 摘要 |
PURPOSE:To make annealed condition in each scanned region uniform and form a high quality single crystal layer on an insulator by a method wherein the intensity distribution of an energy beam along the direction perpendicular to its scanning direction is made to be asymmetrical with respect to the center line of scanning. CONSTITUTION:The annealed region 12 on a wafer 11 is divided into a plurality of rows (scanned regions) 13 whose width is determined by the beam width of an electron beam 14. The electron beam 14 is made to scan along an X- direction and, after every scanning of one row, shifted to a Y-direction and made to scan the next row along the X-direction again. At that time, the intensi ty distribution of the beam 14 is made to be asymmetrical along the direction (Y-direction) perpendicular to the scanning direction (X-direction) of the electron beam 14. More in detail, when the (n)th row is scanned, the beam intensity of the part of the scanned region closer to the (n-1)th row is lower than the intensity of the part farther from the (n-1)th row. With the beam intensity distribution given in the Figure, unevenness of annealing caused by residual heat can be avoided.
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