| 摘要 |
PURPOSE:To readily form multilayer fine pattern interconnections by using a resist remaining pattern reverse to a conventional pattern for a resist pattern, and automatically forming a fine through hole in aluminum interconnection conductor width together with removing step. CONSTITUTION:First layer aluminum interconnection conductors 3 are patterned on a silicon insulating film 2, and a resist 4 is resist-remaining-patterned at a position to be formed with a through hole on the surface of the conductors 3. Further, insulating films 5a, 5b are deposited by an electron cyclotron resonance plasma CVD method, and the resist 4 surrounded at the periphery by the film 5a is removed in the next stage. The film 5a on the selected position of the conductors 3 is opened concurrently with the removal of the resist 4 in the removing step to automatically form a through hole 6. Accordingly, when second layer aluminum interconnection conductor 7 is patterned thereon, 2-layer multilayer interconnections can be readily formed.
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