| 摘要 |
PURPOSE:To provide a semiconductor device in which photo diodes having high monitoring current output efficiency are integrated by forming oblique surfaces on epitaxial regions to become light absorption layers of the photo diodes in a semiconductor laser output direction. CONSTITUTION:A groove 2 of 2-4mum of step difference is formed on a part of a photo diode forming portion of an N-type GaAs substrate 1. Then, an N-type GaAlAs conductive layer 3, an I-type GaAs active layer 4 and a light absorption layer 4', a P-type GaAlAs conductive layer 5 and an N-type GaAs cap layer 5 are sequentially epitaxially grown to form an electrode contacting region 7. A light laser-oscillated by supplying a current I from an electrode 10 of a laser is emitted in directions 13, 14. Here, negative or zero potential is applied to a photo diode electrode 11 to obtain an output current Ipd. Particularly, the angle to the layer 4' with respect to the laser emitting direction becomes approx. 3-5 times as large as previous value by the groove oblique portion 15 of the photo diode to remarkably improve a current output efficiency.
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