| 摘要 |
PURPOSE:To reduce diffusion in the transverse direction, and to control the pattern size of a resistance region precisely by forming the resistance region of a polycrystalline silicon resistor used for a load resistor and a fuse resistor for an SRAM through ion implantation in a semiconductor integrated circuit. CONSTITUTION:Non-doped poly Si is deposited on field SiO2 2 on an Si substrate 1 through a CVD method, and phosphorus is thermally diffused, thus shaping N<+> poly Si 3. Si 3 may be formed through CVD in which phosphorus is doped. The N<+> poly Si 3 is patterned through photolithography or poly Si etching, and a poly Si resistance pattern is shaped. The surface is masked with the exception of a poly Si resistance region by a resist 6, and electrically inactive ions such as nitrogen are implanted into said poly Si resistance region. The ions are implanted at energy such as 30-180keV energy and dosage such as 10<14>-10<17>cm<-2> dosage, thus replacing the N<+> poly Si 3 having a resistance value of 30-50OMEGA/square with N<-> poly Si 4 having a resistance value of 100-10kOMEGA/square. The resistance values can be controlled accurately by ad justing energy and dosage.
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