| 摘要 |
PURPOSE:To make it possible to use for memory storing of CMOS.RAM in two cells in series, by applying vanadium pentoxide as a positive electrode, and an alloy of bismuth, tin, and cadmium or zinc, with lithium attached, as a negative electrode. CONSTITUTION:A positive electrode 6 is made of mainly vanadium pentoxide. A negative electrode is made of an alloy 2 of bismuth, thin, and cadmium or zinc, with lithium attached. In this case, the composition of bismuth and thin is made between 1:2 and 2:1 of the weight ratio, and the ratio of cadmium or zinc is made to 20-40wt% to the total alloy 2. The positive and negative electrodes are combined through a separator 4 to form a nonaqueous electrolyte secondary cell. Therefore, the voltage per cell is set below 2.75V and the voltage of two cells in series can be set at a chargeable voltage 5.5V, making it possible to apply for the memory storing power source for CMOS.RAM. |
