发明名称 Chemoresistive gas sensor
摘要 A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.
申请公布号 US4674320(A) 申请公布日期 1987.06.23
申请号 US19850781543 申请日期 1985.09.30
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 HIRSCHFELD, TOMAS B.
分类号 G01N27/12;(IPC1-7):G01N27/12 主分类号 G01N27/12
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