| 摘要 |
PURPOSE:To grow the titled single crystal film having excellent crystallinity by previously nitriding the surface of a GaAs crystal substrate when the single crystal film of GaN or AlN is grown on the GaAs crystal substrate. CONSTITUTION:The GaAs crystal substrate is arranged in a reaction tube, the inside of the reaction tube is evacuated, then the substrate is heated, and a gaseous hydrogen current contg. hydrazine is introduced to nitride the surface of the substrate. Then a gaseous hydrogen current contg. hydrazine and a gase ous hydrogen current contg. trimethylgallium a trimethylaluminum are intro duced to grow the single crystal of GaN or AlN on the nitrided substrate. Consequently, a single crystal film having excellent crystallinity can be grown at a comparatively low temp. with a simple device without necessitating the use of electron cyclotron resonance plasma, etc.
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