| 摘要 |
PURPOSE:To obtain a semiconductor device which is long-lived and has uniform characteristics by forming a non-current injection region by ion-implanting one of He, Be, Li and B in the semiconductor. CONSTITUTION:The formation of a non-current region for a semiconductor, such as a GaAs compound semiconductor, is formed by ion-implanting at least one kind out of the following specified light elements other than without using protons: helium He, beryllium Be, lithium Li and boron B: When this forming technigue applies to a gain guide type semiconductor laser of a stripe structure, an N-type AlxGa1-xAs first clad layer 2 and a P-type or N-type AlyGa1-yAs active layer, for example, and moreover, a P-type AlxGa10xAs second clad layer 4 and a P<+> low-resistivity cap layer 5 are epitaxially grown in order on an N-type GaAs substrate 1 and the active layer and thereafter, a metal masking layer or a mask 20 of wire or so on to be extended in one direction is arranged on the cap layer 5 and boron B is implanted with a specific accelerating energy in such a depth that it intrudes from a top of the cap layer 5 into part of the thickness of the second clad layer 4.
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