| 摘要 |
PURPOSE:To improve the characteristics of a boundary by depositing a film made of silicon and germanium on a germanium, and heat treating it in an oxidative atmosphere. CONSTITUTION:When a film 2 made of silicon Si and germanium Ge on a Ge substrate 1 is oxidized, the germanium or GeO2 in the oxide film 3 is vaporized in the form of GeO on the surface of the oxide film since the SiO2 is stable as compared with the GeO2, the Ge is removed from the oxide film in the pile-up form on the boundary between the film made of Si and Ge and the oxide film to obtain the oxide film similar to the SiO2. When the GeO2 in the oxide film is annealed with oxygen, the GeO is, since the GeO is volatile, removed from the oxide film, and the quality of the oxide film is further raised. Thus, the boundary characteristics of the Ge and the insulating film and the quality of the insulating film are improved.
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