| 摘要 |
PURPOSE:To obtain a high speed drive signal at a high voltage by boosting a gate voltage of a P-channel FET by a boosting capacitance and decreasing the voltage by an N-channel FET through one signal supply. CONSTITUTION:The 1st and 2nd FETs 39, 40 of opposite conduction type whose connecting point is connected to an output terminal connected in series between the 1st power terminal 36 and the 2nd power terminal 38, a boosting capacitor 32 whose one terminal is connected to a gate of the 1st FET and whose other terminal is connected to a node to which a signal of inverted phase to that of a signal at an output terminal is fed, and a drive circuit outputting a signal of inverted phase to that of the signal at the output terminal and giving it to the gate of the 1st FET are provided. The gate voltage of the 1st FET is boosted by the boosting capacitor and the voltage is lowered by using the 2nd FET through one signal supply. Thus, a high speed high voltage drive signal is obtained. |
