| 摘要 |
PURPOSE:To reduce crystal defects and a reactive current by a method wherein, after a corrugation is formed on a substrate, an etching stopper layer is formed thereon and a structure like the VSB laser of a conventional Fabry-Perot resonator is formed on the etching stopper layer. CONSTITUTION:The surface of an N-type InP substrate 1 is etched with bromine-based etchant to form an InP corrugation 2 with a pitch of about 200nm. An InGaAsP layer 3 with a wavelength lambda 1.15mum and a thickness of about 0.1mum as an etching stopper layer and a P-type InP layer 4 with a thickness of about 1mum and an N-type InP layer 5 with a thickness of about 2mum as lateral light confinement layers are successively formed on the corrugation 2 by a liquid phase growth method (LEP). Further, a silicon dioxide layer is formed by a chemical vapor phase deposition method. By a lithography process using resist, a stripe window with a width of about 1.5mum is drilled in that silicon dioxide layer in parallel to the direction of <0-1-1>. After the resist is removed, etching is carried out in hydrochloric to form a mesa groove 6 which has an etched surface 6A and the SiO2 layer is removed. An InGaAsP layer 7 as a waveguide layer, an InGaAsP layer 8 as an active layer, a P-type InP layer 9 as a light confinement layer and a P-type InGaAsP layer 10 as a contact layer are formed successively by LPE covering the mesa groove 6. A Ti/Pt/Au layer 11 as a P-type side electrode is formed on the contact layer 10 and an AuGe/Au layer 12 as an N-type side electrode is formed on the backside of the substrate. |
