发明名称 PHOTORESIST SHAPE SIMULATION METHOD
摘要 <p>PURPOSE:To obtain the concn. distribution of the photosensitive agent in a photoresist on a substrate having steps by determining the light intensity and the time and space distribution of the photosensitive agent concn. in the photoresist by using a Maxwell's equation. CONSTITUTION:A conductive film 22 and a photoresist film 23 are formed on the substrate 21. Plural representative points 5 on a suitable horizontal line 24 thereabove are determined as fresh light sources and electromagnetic waves are assumed to spread from said points to a two-dimensional region. The refractive index and dielectric constant of the photoresist change when light is irradiated thereto. The concn. distribution of the photosensitive agent in the photoresist on the substrate having steps of optional shapes is determined by the Maxwell's equation and the sectional shape of the photoresist having the steps after development is calculated from the relation between the developing speed and the concn. of the photosensitive agent by the simulation of development.</p>
申请公布号 JPS62136662(A) 申请公布日期 1987.06.19
申请号 JP19850276746 申请日期 1985.12.11
申请人 HITACHI LTD 发明人 MATSUZAWA TOSHIHARU;ISHIGAKI AKIYOSHI
分类号 G03F7/30;G03F7/20;G03F7/26;G06F19/00 主分类号 G03F7/30
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