| 摘要 |
PURPOSE:To improve a weakening voltage in a vertical electric field near a drain of a semiconductor device by forming a 2-layer structure that a lower layer is a thermal oxide layer having 100-200Angstrom thick to contact with a semiconductor substrate and an upper layer is a dielectric layer having 10-500 of specific dielectric constant and 1,000Angstrom or more of thickness. CONSTITUTION:An MOS field effect element contained in a semiconductor device has at a gate electrode an insulating layer of a 2-layer structure between the gate electrode and a semiconductor substrate that a lower layer is a thermal oxide layer having 100-200Angstrom thick to contact with the substrate and an upper layer is a dielectric layer having 10-500 of specific dielectric constant and 1,000Angstrom or more of thickness. For example, N-type regions 2, 3 are formed as source and drain regions, for example, on the surface of a P-type Si substrate 1 and the gate insulating layer is of a double layer made of a thermal oxide layer 4 having 100Angstrom thick formed on the surface of the substrate 1 and a titanium oxide layer 5 having 2,000Angstrom thick covered by a sputtering method to cover the surface of the layer 4. |
