| 摘要 |
<p>PURPOSE:To obtain the titled member without the decrease in the S/N ratio even under the environment of much moisture and without the dissolution due to the electrolytic corrosion of a Cr electrode by a method wherein an amorphous carbide film, an amorphous photoconductive film, and a semiconductor crystal film of one conductivity type are provided between the first and second electrodes successively from the side of the first electrode. CONSTITUTION:A Cr film is formed on a glass substrate 11, and a Cr electrode 12 is formed by patterning of this Cr film. Next, the substrate is evacuated by a rotary pump placed on a supporting base 22 in a vacuum reaction container 21, and at the same time the substrate is heatd by a built-in heater 25, next an introduced gas is exhausted. Then, the plasma produced by radicals of SiH4 and CH4 is evolved in the container by application of a high frequency power on an opposed electrode 31 from a high frequency power source 30, and accordingly an a-SiC; H film 13 is formed over the entire surface of the substrate. An a-Si; H film 14 is formed on the film 13 by turn-on of an RF power of 25W to the electrode 31. Thereafter, a P type a-Si; H, B film of the uppermost layer is irradiated with a laser beam in the container, and accordingly an Si film 15 is formed on the film 13. Finally, the title member is manufactured by film- formation of an ITO clear electrode 16 on the film 15.</p> |
