发明名称 |
OPTICALLY PHASE-LOCKED SEMICONDUCTOR DEVICES |
摘要 |
A semiconductor device is optically phase-locked by utilizing (1) the Burstein shift in differently doped semiconductor layers and injecting light having an energy level lower than the absorption edge of the heavily doped layer in which optical absorption is not desired and higher than the more lightly doped region where it is desired; and (2) the internal photoemission and injecting light having an energy level lower than the band gap of the semiconductor. |
申请公布号 |
EP0161097(A3) |
申请公布日期 |
1987.06.16 |
申请号 |
EP19850303041 |
申请日期 |
1985.04.29 |
申请人 |
MARTIN MARIETTA CORPORATION |
发明人 |
CHEN, WENPENG;BYER, NORMAN ELLIS |
分类号 |
H01L29/864;H01L31/0232;H01L31/108 |
主分类号 |
H01L29/864 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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