| 摘要 |
PURPOSE:To obtain an organometallic compound containing substantially no silicon component and giving a semiconductor having excellent electrical characteristic, etc., by purifying the organometallic compound of Ga, Al, In through contact with >=1 species of metallic Na, metallic K, Na-K alloy, etc. CONSTITUTION:An organometallic compound of Ga, Al and In, for example a compound expressed by the formula RaMX3-a (R represents 1-3C alkyl; M represents Ga, Al or In; X represents halogen atom; a is 2 or 3), is brought into contact with a treating metal selected from metallic Na, metallic K, Na-K alloy and mixture of >=2 species thereof normally in an inert gas atmosphere at room temperature - 120 deg.C preferably for 0.5-3hr, then the organometallic compound is recovered by distillation. The treating metal is preferably added in such a way that the total amount of the metallic Na and the metallic K comes into 0.05-0.6 molar ratio based on 1mol of the organometallic compound, and Na-K alloy containing 20-65mol% metallic Na being liquid at usual temperature is advantageously used.
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