| 摘要 |
PURPOSE:To prevent the reduction of an active region as well as to form the active region in accordance with the designed value by a method wherein a patterning is performed on a second oxidation-resisting film utilizing the eave generated on a silicon oxide film, and an interelement isolation region is formed by oxidation using said oxide film as a mask. CONSTITUTION:A first oxidation-resistant film 3 is formed on the surface of a semiconductor substrate 1, and a polycrystalline silicon film 4 of active region form is formed thereon by patterning. The whole body of the above-mentioned films is converted into a silicon oxide film 5 by oxidizing the silicon film 4. An oxide film 3 is removed by etching using the oxide film 5 as a mask. The second oxidation-resistant film 8 is formed on the whole surface of the substrate 1, and an oxide film 8 is left on the lower side only of the oxide film 5 by performing an anisotropic etching on the film 8. The oxide film 5 is removed by etching. A selective oxidation is performed on the surface of the substrate 1 using the left oxide films 3 and 8 as masks, and a thick silicon oxide film 9 is formed. As a result, the contraction of an active region is prevented, and the active region in accordance with the designed value can be formed.
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