A method of fabricating a MOS transistor on a substrate.

摘要

The invention relates to fabrication techniques for the construction of MOS transistors to provide source/drain regions (20,22) which are self-aligned and non-overlapping with respect to their gate electrode (16). The non-overlapping feature is provided by defining a gate electrode (16) over a substrate (10), forming an implant mask of dielectric (18), for example, on the sides of the gate electrode (16), and implanting a source/drain region (20,22) such that the implant mask shields a portion of the substrate from implantation to provide a gap between a side edge of the gate electrode (16) and the implanted regions (20,22). The source/drain region (20,22) is then heat driven until its side edge is substantially aligned with the edge of the gate electrode (16). Self-aligned source/drain contacts are also provided using the implant mask to isolate the gate electrode from the contacts and interconnects.