| 摘要 |
PURPOSE:To obtain a circuit constituted with a few occupied area by constituting a resistance requiring a high resistance value with a depletion MISFET. CONSTITUTION:When a power supply voltage -VCC is decreased, since a D MISFETQ12 acts like a high resistance element, the power supply voltage is a value being a threshold value or below of an enhancement MISFETQ13, which is turned on, its output changes from a GND potential to a potential of the power supply voltage and then the output follows the power supply voltage potential. Since the substrate electrode of the D MISFETQ12 is not connected to the power supply terminal but to a point 11 in this case, the parasitic capacitance between the gate and substrate is decreased and even if the power supply voltage is decreased rapidly, the possibility of the potential at the point 11 decreased at the same time due to the capacitance coupling is precluded. |
