| 摘要 |
PURPOSE:To reduce a parasitic capacity generated in a separating groove by laminating insulators having different viscosities to form an insulator region, thereby forming a cavity in the separating groove of a semiconductor device. CONSTITUTION:A cavity 21 is formed in a polyimide region 16 of a separating groove 6. A low viscosity polyimide region 22 is formed in the groove 6, and a high viscosity polyimide region 23 is thereafter formed to obtain the cavity 21. Thus, the cavity 21 is formed in the groove 6 to reduce a parasitic capacity generated from the separating groove.
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