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发明名称
VERFAHREN ZUM HERSTELLEN VON HOCHINTEGRIERTEN KOMPLEMENTAEREN MOSFELDEFFEKTTRANSISTORSCHALTUNGEN.
摘要
申请公布号
AT27751(T)
申请公布日期
1987.06.15
申请号
AT19820107240T
申请日期
1982.08.10
申请人
SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUENCHEN
发明人
SCHWABE, ULRICH, DR.;JACOBS, ERWIN, DR.
分类号
H01L21/265;H01L21/82;(IPC1-7):H01L21/82
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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