| 摘要 |
PURPOSE:To obtain a high-grade epitaxial crystal without a necessity of complicated work such as changing a temperature setting in a crystal growth chamber, by performing a connection with the crystal growth chamber through a gate valve and installing an arsenic protective film-formation chamber equipped with an arsenic molecular beam source. CONSTITUTION:Equipped with an arsenic molecular beam source 21 between a crystal growth chamber 3 and the first sample-introduced chamber 4, an arsenic protective film-formation chamber 22, having a super-high degree of vacuum in the same as the crystal growth chamber, is equipped. An epitaxial layer of GaAs or the like is formed on the surface of a substrate 9 in the crystal growth chamber 3, and then a gate valve is opened to move a substrate holder cassette 8 to the arsenic protective film-formation chamber 22 by using a transfer rod. And, the cassette is placed on a heat sink 23 in the protective film-formation chamber 22, and temperature of the substrate 9 is regulated to become about 200 deg.C or under, and then a protective film of As is formed on the substrate 9 by radiating arsenic molecules from an arsenic molecular beam source 21. Thus, the As protective film is consistently formed on the substrate after epitaxial growth, without changing a set-up temperature of the crystal growth chamber 3.
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