| 摘要 |
PURPOSE:To obtain superior ohmic contact, by piling an Al film as an wiring layer and then doping a surface of the Al film with Si ions to decrease an amount of Si deposited at a contact part. CONSTITUTION:After a contact hole 4 is selectively opened on an insulating film 3 so that it corresponds to a diffusion region 2, an Al film 7 is piled on an insulating film 3 containing the contact hole 4 and the upper surface is doped with Si ions 8 from above. When heat treatment is performed thereafter, the Al film 7 turns into an Al Si film by the doping Si ions 8, and ohmic contact can be realized between a wiring layer and the diffusion area 2. And, by doping of Si ions 8 at a surface side of the Al film 7, Si precipitates mainly at the surface side of the AlSi film, with precipitation of Si being decreased at the contact part. The same effect appears in either of N-type substrate and P<+> diffusion region, and even in the case of ion implantation of Si ions by an ion-implanting machine.
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