| 摘要 |
PURPOSE:To realize a direct contact having high reliability, to reduce the occupying area of a transistor and to improve the degree of integration by directly connecting electrodes for the transistor by using a silicified film consisting of a high melting-poing metal. CONSTITUTION:Side walls 6a, 6b formed by an insulator are shaped to the side surfaces of the peripheral sections of a wiring 5a composed of first polysilicon and a gate electrode 5b. Only the side wall 6a is removed selectively through photoengraving and an etching method, and a high melting-point metallic film 7 is shaped through a sputtering method, a CVD method or the like. The high melting-point metallic film 7 is silicified through heat treatment, and the high melting-point metallic film 7 not reacted on the side walls 6b and on a thick insulating film 2 is removed through the etching method. The formed silicified films have electric resistance lower than a conventional method, and connect a gate and a source or a drain. The silicified films are connected in the side section of the periphery of a wiring film consisting of first polysilicon, thus remarkably reducing an area required as a contact surface. |
