| 摘要 |
PURPOSE:To provide a semiconductor laser device which can be integrated and can amplify an optical signal directly without optoelectric conversion and facilitate amplification of a light with one device and facilitate extremely high speed modulation. CONSTITUTION:In order to obtain a mechanism which can emit a light with a specific wavelength, a reflective surface, whose refractive index is smaller than the refractive index of an active layer, is provided so as to divide the total resonance length (l) of the active of the waveguide of a semiconductor laser layer into lengths (l1) and (l2). With this method, a specific wavelength lambda1, which is determined by the total resonator length (l), (l1)-(l2) and the gain distribution of the laser, can be obtained. In the same way, if the total resonator lengths and divided lengths are (l'), (l1') and (l2') and (l''), (l1'') and (l2''), wavelengths lambda2 and lambda3 can be obtained while the peak value of the gain distribution is constant. In order to facilitate modulating the lights with these wavelengths by optical inputs with extremely high speed, a means with which a resonator loss can be varied by an electric field is employed. In other words, the reflective surface of the resonator is composed of a semiconductor multilayer film and, at the same time, a layer of a multilayer well structure, which can vary the transmittance of room temperature excitation by an electric field, is provided in a part of the light path of the resonator. With this constitution, the oscillating conditions depend upon the resonator loss controlled by the electric field and extremely high speed operation can be realized.
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