发明名称 |
ELECTRICALLY CONDUCTIVE CONTACT OR METALLIZING STRUCTURE FOR SEMICONDUCTOR SUBSTRATES |
摘要 |
<p>In a conductor pattern for integrated circuits, the use of barrier layers of TiW and selected transition metals between gold and a silicon substrate, with the transition metal containing a supplemental barrier region or stratum of an intermetallic formed between it and the gold. Also comprehended is the use of a platinum silicide layer between the TiW layer and silicon for Schottky Barrier Diodes.</p> |
申请公布号 |
EP0024572(B1) |
申请公布日期 |
1987.06.10 |
申请号 |
EP19800104532 |
申请日期 |
1980.07.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOWARD, JAMES KENT;WHITE, JAMES FRANCIS |
分类号 |
H01L21/768;H01L21/28;H01L23/532;H01L29/43;H01L29/47;(IPC1-7):H01L29/40;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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