| 摘要 |
PURPOSE:To form an org. semiconductor having a large size and accurate dimensions, by heat-treating a composite molding formed from a powder of a specified insoluble infusible material, a phenolic resin and zinc chloride in a non-oxidizing atmosphere. CONSTITUTION:This org. semiconductor is a heat-treated material obtd. by heat-treating a composite molding formed from a powder of an insoluble infusible material having a polyacene skeleton structure and a specific surface area of 600m<2>/g or above as measured by BET method, a phenolic resin and zinc chloride in a non-oxidizing atmosphere and is formed from an insoluble infusible substrate having a polyacene skeleton structure, an atomic ratio of hydrogen to carbon of 0.05-0.6 and a specific surface area of 600m<2>/g or above as measured by BET method. It is preferred that in the materials of said composite molding, the insoluble infusible material is a heat-treated product of a phenolic resin and the phenolic resin is a phenol/formaldehyde resin. The electrical conductivity of the org. semiconductor can be increased by doping it with a known electron-donating or electron-accepting dopant.
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