| 摘要 |
PURPOSE:To continuously manufacture the titled device by forming a semiconductor oxide film or a semiconductor film by a normal pressure CVD method. CONSTITUTION:A semiconductor oxide film or a semiconductor film is formed by a normal pressure CVD method. The oxide film formed by the CVD method includes SnO2, In2O3, ITO, ZnO, or CdO, and the semiconductor film includes amorphous silicon, polysilicon or 2-element amorphous silicon. The normal pressure CVD includes first preliminarily heating substrate, then forming a thin film on the heated substrate in reactive gas atmosphere surrounded by an air curtain, i.e., forming a hetero junction, and manufacturing a cell through a cooling step. Thus, a continuous manufacture can be performed. |
