| 摘要 |
PURPOSE:To integrate in high density a semiconductor device by separating the same polycrystalline silicon film into gate electrode and field oxide film in one masking step, and oxidizing the field oxide film to convert to the field oxide film. CONSTITUTION:The same polycrystalline silicon film 24 is separated by one masking step to gate electrode 33 and field oxide film 31, and the exposed surface of a semiconductor substrate 21 is covered with a silicon nitride film 28. The film 24 is oxidized in the state that a portion of the film 24 to become the electrode 33 is covered with a silicon nitride film 30 to obtain a field oxide film 31. Thus, the electrode 33 and a hole 25 can be formed in a self-aligning manner without considering a masking error. Thereby, an accurate masking step is eliminated to readily obtain a semiconductor device integrated in high density.
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