| 摘要 |
PURPOSE:To obtain a good sensing characteristic for a combustible gas by providing holes which penetrate, a metal and oxide semiconductor by etching in such a manner that the gas contacts the joint boundary face between the metal and the oxide semiconductor. CONSTITUTION:A thin Pd film having 2,000Angstrom thickness as an upper electrode 1 and a thin ZnO film having 2mum thickness as the oxide semiconductor 2 are respectively formed to the shape shown in the figure to a 1.0mmX0.5mm size respectively by using an electron beam vapor deposition method and sputtering method. A glass material is used as an insulating substrate 6. A resist is then coated on the surface and after the pattern for gas introducing holes sized 10mumphi diameter and 20mum pitch is exposed and developed thereto, gas holes 3 are bored by chemical etching to 3,000Angstrom depth; finally a heater 7 and lead wires 4 are attached thereto to form an element. Since the holes 3 are exactly bored by a photolithographic technique, the area in the joint part of Pd and ZnO in contact with the combustible gas is formed with good reproducibility. The diode type sensor which is stable and has less variance is thus obtd.
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