| 摘要 |
PURPOSE:To manufacture an ultra-thin film photoelectric conversion element which has excellent flexibility by a method wherein a plurality of photoelectric converting semiconductor layers are formed on a substrate and after that the substrate is removed. CONSTITUTION:A metal substrate 20 which can be removed with a solvent such as acid and alkali is prepared and a transparent semiconductor layer 12 is formed on its surface 20a. Then, an amorphous silicon layer 11 which has a PIN composition and a semiconductor layer 13 are successively formed on that 1st conductive layer 12. After that, the metal substrate 20 is removed with a solvent such as acid and alkali to obtain an extra-thin film photoelectric conversion element 10. Thus, by removing the metal substrate, the flexibility of the photoelectric conversion element 10 as a whole can be improved. Also, the thickness of the photoelectric conversion element can be thinner by the thickness of the metal substrate. |
