| 摘要 |
PURPOSE:To form a metal wiring layer on the surface of a substrate by a method wherein a substrate is placed in organic metal vapor, the base is cooled, an organic metal is uniformly adsorbed to the surface of the substrate, the organic metal is decomposed by the light energy of a laser beam, and the inner surface of a recessed part is coated with the organic metal. CONSTITUTION:A contact hole 4 is formed on an insulating film 2, and then a semiconductor substrate 1 is cooled in the inert gas such as N2 or Ar and the like containing the vapor of organic metal of (CH3)3Al, for example. As a result, an organic metal layer 6 is adsorbed to and formed on the inner surface of the hole 4 and the whole surface of the insulating film 2. When a laser beam L of suitable energy is made to irradiate on the desired place, a chemical reaction and thermal decomposition caused by the light energy are locally generated on the laser irradiation part only, and a metal wiring layer 5 is formed. As a result, the wiring layer 5 is uniformly formed on the entire upper surface including the inner wall of the hole 4.
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