MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To facilitate unification of an optical semiconductor device and an another semiconductor substrate on which electronic circuits are formed without deteriorating the characteristics of the device by a method wherein welding metal is applied to the one side of the optical semiconductor device and the device is aligned with and put on the welding part of the semiconductor substrate and the two components are heated, welded and unified. CONSTITUTION:AuSn 15 for welding is applied to the P-type side of a surface emission type LED whose light emission diameter is 25mmphi and whose chip size is 300mumX300mum to the thickness of 1mum by whole surface evaporation. An Au bump 12 is formed on an SOS substrate by a selective Au plating method with a resistmask to the thickness of about 1mum. Then the whole surface of the SOS substrate is coated with polyimide 14. After the polyimide 14 is cured by two-step baking at 200 deg.C and 350 deg.C, the whole surface is etched by dry etching and the etching is stopped when the Au bump 12 is exposed. The LED is put on the Au bump 12 and heated in N2 atmosphere at 260 deg.C and welded.