| 摘要 |
PURPOSE:To drive the titled amplifier by a high frequency signal by connecting a gate of the 1st load MIS transistor (TR) and a gate of the 2nd load MIS TR to a fixed voltage source causing a voltage difference larger than the voltage difference between a source and a drain. CONSTITUTION:The gates of the load P-channel MISFETs Q1, Q2 are connected to a negative power supply Vss1. Since the gate-source voltage is larger than that connected to the drain, the capability is improved and the gate width to obtain the same load resistance is decreased, then the drain junction capacitance is reduced and the gate capacitance of the MISFETs Q1, Q3 is decreased because the gate width is reduced and the dividing ratio of the gate capacitance to the drain side is reduced less than the division to the source, and the frequency keeping the gain as the unity is increased. Thus, the high frequency drive is attained.
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