| 摘要 |
PURPOSE:To shorten the access time resulting from an increase in memory capacity and to reduce the number of bonding pads by connecting a functional conductor part to the insulating layer of a conductive pattern through a through hole. CONSTITUTION:In terms of an element CHI, a multilayered wiring part A is formed, and a magnetic buffer generator G, a data write gate WG, a map information write gate MWG, a functional conductor pattern such as a data read gate RG, the 1st conductive pattern of a ground line GDL are formed with an Au layer on the 1st layer. A bonding pad BP is formed with an Al layer as the 2nd layer on the front of the 1st layer through a passivation film. The through hole TH is formed on the 1st conductive pattern in the vicinity of the BP, and the 1st conductive pattern in the TH and the pad BP are connected on the 2nd layer by the 2nd conductive pattern made of an Al layer.
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