| 摘要 |
PURPOSE:To facilitate driving and to prevent blooming by bringing a main surface of an impurity layer of opposite conductive type to a substrate corresponding to a lower part of a selection gate into an accumulation state during a signal accumulation period. CONSTITUTION:The selection gate 2 of a photodiode 1 and a transfer electrode of a vertical CCD3 are separated, the potential at the lower part of the selection gate 2 is made fully high during reading the signal and fully small and brought into the accumulation state during the period for accumulating the signal. Accordingly, even if the potential of the photodiode 1 is changed to OV, a signal charge does not flow to the vertical CCD register 3. Further, when it goes to a negative potential, the signal charge is absorbed in a direction of an n substrate by a longitudinal type npn transistor consisting of 1, 32, 31. Thereby, the generation of the blooming can be prevented.
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