| 摘要 |
PURPOSE:To heat a semiconductor substrate uniformly without contaminating the surface of the substrate, and to attach and detach the substrate and a block easily by forming a dielectric thin-film having a resonance absorption band in an infrared region onto the back of the substrate and irradiating the thin-film by infrared rays. CONSTITUTION:A semiconductor substrate 1 to which a dielectric thin-film 7 is shaped previously is fitted to a substrate holder 8, downward directing the thin-film 7, and fixed by a hold-down plate 9. Infrared ray lamps 10 are arranged in an array to a lamp holder 11 functioning as a reflecting plate in combination, and set to the bottom of the substrate holder 8 so that the semiconductor substrate 1 and the infrared ray lamps 10 are faced oppositely at regular intervals. A thermocouple 6 is annexed to the back of the semiconductor substrate 1 and a heating temperature is measured, thus controlling a lamp power supply 12, then adjusting the substrate at a predetermined heating temperature. The dielectric thin-film having a resonance absorption band in an infrared region is shaped onto the back of the semiconductor substrate and heated through the irradiation of infrared rays, thus uniformly heating the substrate without contaminating the surface of the substrate, then easily attaching and detaching the substrate and a block.
|
