Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board,申请号US19850790615-传众专利搜索

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发明名称	Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
摘要
申请公布号	US4670299(A)	申请公布日期	1987.06.02
申请号	US19850790615	申请日期	1985.10.23
申请人	FUJITSU LIMITED	发明人	FUKUYAMA, SHUN-ICHI;YONEDA, YASUHIRO;MIYAGAWA, MASASHI;NISHII, KOTA;MATSUURA, AZUMA
分类号	C08G77/06;H01B3/46;H01L21/312;H01L21/48;H01L23/498;H05K1/00;(IPC1-7):B05D5/12	主分类号	C08G77/06
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