| 摘要 |
PURPOSE:To decrease an OFF current, to increase ratio of the width to the length of a channel, to microminiaturize it and to increase an allowable current by increasing the length (channel length) of electron running direction at the end of the channel larger than the center part. CONSTITUTION:A resist mask 10 is formed on a gate region and source, drain regions, and width the mask a metal film 7 for source, drain electrodes (aluminum film 73 and titanium film 72), an N-type hydrogenated amorphous silicon film 71, an operating layer 4, and a gate insulating film 3, as desired are removed except from a thin film transistor region (a). Then, when the mask 10 is removed, a gate electrode 2 is increased in the gate length at the end larger than that at the center. Accordingly, the channel length of the center is reduced (b), and an OFF current is decreased even if an allowable current is sufficiently large. |
