| 摘要 |
PURPOSE:To decrease photolithography processes for forming a bonding hole to one time, by forming macromolecular resin films for color filters, forming an inorganic thin film at the uppermost part, removing the film only at an electrode part, and removing the macromolecular resin films on the electrode part with the inorganic thin film as a mask. CONSTITUTION:On a semiconductor substrate 100, in which a photoelectric conversion part 101 and a scanning circuit part are provided, macromolecular resin films 105-108 for color filters corresponding to the required number of colors are formed. Then, an inorganic thin film 109 is formed on the uppermost part of the macromolecular resin films 105-108. Thereafter, said inorganic thin film 109 only on an electrode 104 is removed by a photolithography method and an etching method. With said inorganic thin film 109 as a mask, said macromolecular resin films 105-108 on the electrode 104 are removed. Thus the surface of the electrode 104 is exposed. For example, the silicon oxide film 109 is formed on a protecting film 108 by using an optical vapor phase chemical growing method. The film is etched and the hole part 110 is formed. Then, with the silicon oxide film 109 as a mask, a wire bonding hole 11 is formed on the wire bonding pad electrode 104 with oxygen plasma.
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