| 摘要 |
<p>PURPOSE:To produce well a high impedance type thin silicon film by adding oxygen, nitrogen, diborane or hydrocarbon to fluorosilane of higher order and hydrogen and bringing the resulting reactive gas into a reaction on a substrate in a plasma atmosphere. CONSTITUTION:Fluorosilane of higher order represented by a general formula SinF2n+2 (where n is an integer of >=2), e.g., Si2F6 and hydrogen are mixed with one or more among oxygen, nitrogen, diborane and hydrocarbon. This gaseous mixture is brought into a reaction on a substrate of glass or the like with a plasma CVD apparatus to form a thin film semiconductor. This thin film has low photoconductivity and low dark electric conductivity and is applicable to the photosensitive body of a copying machine, an image device or the like.</p> |
