发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To realize a practically usable laser element whose end faces are produced through working processes other than the cleavage process, by coating the laser element unsymmetrically such that the auxiliary end face used only for monitor light or the like has a larger difference in level than the other end face. CONSTITUTION:End faces of light emission output surface are produced by wet etching and dry etching. In each of these end faces, levels are differed between the surface of the light emitting region and the surface of the other region. The difference in level (difference 1) between the light emitting region and the other region in the principal light emission end face is smaller than the difference in level (difference 2) between the light emitting region and the other region in the other end face. The difference 1 is 5mum or less, while the difference 2 is 10mum or less. A low reflection film 6 is provided on the end face with the smaller difference in level. A high reflection film 8 is provided on the end face with larger difference in level.
申请公布号 JPS62115792(A) 申请公布日期 1987.05.27
申请号 JP19850254745 申请日期 1985.11.15
申请人 HITACHI LTD 发明人 SASAKI YOSHIMITSU;YAMASHITA SHIGEO;KANEKO TADAO;ONO YUICHI;KAJIMURA TAKASHI
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址