发明名称 |
Method for making submicron mask openings using sidewalls and lift-off techniques. |
摘要 |
<p>A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor. </p> |
申请公布号 |
EP0223032(A2) |
申请公布日期 |
1987.05.27 |
申请号 |
EP19860113666 |
申请日期 |
1986.10.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOK, ROBERT KIMBALL;SHEPARD, JOSEPH FRANCIS |
分类号 |
H01L21/302;H01L21/033;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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