| 摘要 |
PURPOSE:To prevent diffusions into a semiconductor substrate, polycrystalline silicon or an insulating film of elements or impurities from the inside of a metallic material, to stabilize the characteristics of a semiconductor device and to improve reliability by forming complex layers onto the surfaces of an electrode constituted of the metallic material and a wiring. CONSTITUTION:With a gate electrode 6, a complex layer 11 is shaped onto the surface of a tungsten silicide layer 5, and the tungsten silicide layer 5 is coated with the complex layer 11. That is, when the complex layer 11 is formed previously on the surface of the tungsten silicide layer 5 through a method such as heat treatment in which the gate electrode 6 is thermally treated under the state in which cyan is applied onto the surface of the gate electrode 6, the complex layer 11 loses a property as a metal, and functions as a barrier in subsequent heat treatment process, thus preventing diffusions to a semiconductor substrate 1, source-drain regions 7, etc., of a tungsten element and impurity elements except the tungsten element in the tungsten silicide layer 5, then resulting in no effect on the electrical characteristics of these substrate 1 and source-drain regions 7. |
