| 摘要 |
PURPOSE:To obtain an inexpensive IC package having excellent heat release property by disposing metal powder coated with diamond in a resin, or disposing to partly expose metal wirings coated with diamond out of a resin layer. CONSTITUTION:A plasma CVD method is used to apply diamond on a basic material. A rotating annular furnace 11 is, for example, held in vacuum, and heated therein to 800-850 deg.C by a high frequency or microwave generator 12 provided around the furnace 11. Cu powder or Cu wirings are supplied from a basic material supply port 13 at one end of the furnace 11, a material gas of diamond such as a mixture gas of 1vol% of CH4 and 99vol% of H2 is introduced from other end gas inlet 14, and exhausted from a gas outlet 15. CH4 gas is excited by the high frequency or microwave during this period to precipitate the diamond, the coated basic material is removed from an outlet 16. The coated Cu powder is added to the resin, IC surface is coated with the mixture to form a layer of thermal conductive resin 17, thereby obtaining an IC package. |
