发明名称 ELECTRON BEAM EXPOSURE METHOD
摘要 PURPOSE:To maintain the accuracy of correcting a deflecting distortion for a long period by obtaining a first deflecting distortion value of the entire drawing region by reflecting electrons from a first mark of a heavy metal, and correcting the first deflecting distortion value by a second mark on a substrate to be exposed to decide the correcting value of the distortion at exposing time in an electron beam exposure. CONSTITUTION:When second deflecting distortion values 8a-8d are completely measured, the ratios of the second deflecting distortion values 8a-8d to the first deflecting distortion values 5a-5d of specific positions 7a-7d are respectively calculated, the average value is used as a proportional coefficient C, and applied to a control register of a deflecting system D. Then, in case of drawing a picture, the coefficient C is multipiled by the first value 4 of the drawing position, with the obtained value as a correcting value 6a it is corrected to draw the picture. When a desired pattern 2 is drawn in this manner, the drawn pattern 3b after correction coincides substantially with the pattern 2. The measurements of the values 8a-8d are desired to be executed at every substrate to be exposed. Thus, the correction for the distortion can be always follow the variation in a charge-up drift.
申请公布号 JPS62115828(A) 申请公布日期 1987.05.27
申请号 JP19850255956 申请日期 1985.11.15
申请人 FUJITSU LTD 发明人 FUKITA MAKIO;SAKAMOTO JUICHI
分类号 H01L21/30;H01L21/027 主分类号 H01L21/30
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