| 摘要 |
PURPOSE:To suppress a surge voltage, to improve a switching velocity and to save the assembling of an application device to a high frequency inverter by containing discrete devices in one package to reduce the inductance of wirings. CONSTITUTION:A P-channel MOSFET 5 connected in series with N-channel MOSFET 4 is resin-sealed in a module 1 composed of a bipolar transistor 2, a flywheel diode 3, and an N-channel MOSFET 4, the gate G and the drain D of the P-channel MOSFET 5 are connected respectively with the gate G and the source S side of the MOSFET 4, and its source S is connected with the emitter E side of the transistor 2. Thus, discrete devices can be contained in one package, and only one drive signal source is fundamentally sufficient, thereby simplifying the signal source. |
