| 摘要 |
PURPOSE:To obtain a transistor having preferable frequency characteristic by reducing a distance between a base electrode leading contacting hole and an emitter layer, and forming an emitter electrode of the second silicon film and a metal silicide film. CONSTITUTION:In the manufacture of a semiconductor device including a plurality of emitter layers in a base layer, a distance D2 between an emitter layer 71 and a metal silicide film 501 connected through a polysilicon film 601 with a base electrode 9 is decided by a superposed portion of a window opening portion 71 for diffusing and the polysilicon film 602 to become a diffusion source. Accordingly, the distance can be shortened as compared with a conventional one. Thus, the base resistance is not only reduced that much, but the distance is shortened by using the film 501. A collector electrode is formed of a polysilicon film 603, a metal silicide film 502, and an emitter electrode is formed of the films 602 and 502. Accordingly, a contacting resistance is reduced, and the contacting resistance and the emitter resistance can be resultantly decreased.
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