| 摘要 |
PURPOSE:To protect a first pattern against damage by a method wherein a part or the entirety of the first pattern is covered with a protecting film before the formation of a second pattern. CONSTITUTION:A first pattern 10 is formed on a substrate 3 and then a resin film 12 is formed by photolithography or the like to cover a part of the first pattern 10. A second pattern 11 is then formed by evaporation. In this process, the first pattern 10 and a mask for the formation of the second pattern 11 may contact each other but, owing to the strong resin film of a low friction factor in presence between, the first pattern 10 is protected against damage. The resin film 12 covering a part of the first pattern 10 may be built of a resin belonging to any of the polyimide, polyimide-amide, polyamide, or teflon family. Such a resin may be applied by tape-aided masking or screen printing.
|
